热re99久久6国产精品_vr专区日韩精品中文字幕_欧美中文字幕制服丝袜在线_狼友视频国内精品五月天综合网缴情五月中文_国产伦一区二区三区_日韩中文字幕高清在线_日本黄污在线精品_国产精品91免费播放_日本系列 1页 亚洲系列_免费看黄在线网站

Measurement of carrier concentration on SiC wafer surface

Return to List

Technical parameters:

1、Measurement mode: MOS, Schottky

2、Sample size: diameter ≤ 200mm, minimum test size for non-standard samples or fragments is 30mm * 30mm

3、Test range for carrier concentration in epitaxial layer: 1E14-5E18 cm-3

4、Hg contact area: 0.018-0.027 cm2

5、 Contact area repeatability: 1 sigma<0.5%

 

Please contact Manager Wu from the sales department for more details (phone number:15225822566)