热re99久久6国产精品_vr专区日韩精品中文字幕_欧美中文字幕制服丝袜在线_狼友视频国内精品五月天综合网缴情五月中文_国产伦一区二区三区_日韩中文字幕高清在线_日本黄污在线精品_国产精品91免费播放_日本系列 1页 亚洲系列_免费看黄在线网站

Adhering to the development philosophy of "people-oriented pursuit of excellence," PowerEpi endeavors to cultivate a professional team characterized by leading technology, meticulous operations, and forward-thinking innovation. With the mission of advancing the semiconductor industry, PowerEpi is dedicated to becoming a world-class provider of semiconductor materials.

Our R&D headquarters is located in Songshan Lake Materials Laboratory, Dongguan City, Guangdong Province, and has two wholly-owned subsidiaries in Guangzhou, which focusing on the production and manufacturing of SiC epiwafers and equipment for SiC material growth.

PowerEpi has a wealth of experience in the research and development, as well as the production of SiC epiwafers. To date, our products have been validated by the multi-turn chips of several leading domestic SiC device manufacturers, and we possess the capability for large-scale production. Leveraging our independent innovation in SiC epitaxial technology and in partnership with the premier domestic SiC substrate resources, we are committed to furthering our strategic presence in the semiconductor industry. We steadfastly maintain that technological innovation serves as the driving force, dedicating our corporate strength to expedite the establishment of a robust technology nation and to achieve a high level of technological self-reliance and self-improvement.

From2018 to 2019, the SiC and Related Materials group was established in Songshan Lake Materials Laboratory. We started the construction of Pilot production line in R&D of silicon carbide (SiC) homoepitaxy.

In 2020, PowerEpi Semiconductor Co., Ltd. was officially registered and established. At the same year, ours high - standard mass - production R& D line was successfully started to run.

In 2021, 650V SBD and MOS devices based on our epiwafers passed the tape-out verification in our customers. - The team launched the independent R & D of the CVD epitaxial furnace, and also registered a wholly-owned subsidiary corporation, Guangzhou Y

The 1200V/26mΩ MOSFET devices based on our epiwafers passed the tape-out verification in our customers. The chip yield rate was comparable to foreign materials.
A wholly - owned subsidiary, PowerEpi (Guangzhou) Semiconductor Co., Ltd., was registered and established.
The company gained the recognition of the capital market in the angel round and successfully completed the first - round financing.

PowerEpi passed the ISO9001 and SA8000 certifications and was awarded the title of "National High-tech Enterprise".
The R & D team successfully achieved homoepitaxial growth on 4H-SiC p-type substrates and 3C-SiC substrates by TSSG method.
These products have already been sold in small quantities.
Guangzhou YS Equipment successfully developed its first epitaxial furnace, which passed the client's verification and was shipped out. The single crystal furnace using TSSG method was also successfully completed.
The construction of PowerEpi (Guangzhou) Semiconductor Factory was initiated.

The characteristic epitaxial process was solidified.
The homoepitaxial process based on the TSSG substrate was completed in R & D.

目前在第1頁, 共有1頁, 共有4條記錄 第一頁 上一頁 1 下一頁 最后一頁 跳轉(zhuǎn)到